F11N60F mosfet equivalent, 600v n-channel mosfet.
* 650V @TJ = 150°C
* Typ. RDS(on) = 0.32Ω
* Fast Recovery Type ( trr = 120ns)
* Ultra Low Gate Charge (typ. Qg = 40nC)
* Low Effective Output Capacita.
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailore.
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